for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 282 linear & power amplifiers - smt hmc498lc4 gaas phemt medium power amplifier, 17 - 24 ghz v02.1208 general description features functional diagram the hmc498lc4 is a high dynamic range gaas phemt mmic medium power ampli er housed in a leadless pb free smt package. operating from 17 to 24 ghz, the ampli er provides 22 db of gain, +26 dbm of saturated power and 23% pae from a +5v supply voltage. noise gure is 4 db while output ip3 is +36 dbm typical enabling the hmc498lc4 to function as a low noise front end as well as a driver ampli er. the rf i/os are dc blocked and matched to 50 ohms for ease of use. the hmc498lc4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. output ip3: +36 dbm saturated power: +26 dbm @ 23% pae gain: 22 db +5v @ 250 ma supply 50 ohm matched input/output rohs compliant 4x4 mm smt package electrical speci cations, t a = +25 c, vdd1, 2, 3 = 5v, idd = 250 ma* typical applications the hmc498lc4 is ideal for use as a lna or driver ampli er for: ? point-to-point radios ? point-to-multi-point radios & vsat ? test equipment & sensors ? military end-use parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 17 - 19 19 - 23 23 - 24 ghz gain 18 22 20 22.5 18 21 db gain variation over temperature 0.02 0.03 0.02 0.03 0.02 0.03 db/ c input return loss 13 13 10 db output return loss 15 15 20 db output power for 1 db compression (p1db) 22 25 21.5 24.5 22.5 25.5 dbm saturated output power (psat) 26.5 25.5 26.5 dbm output third order intercept (ip3) 35 36 35.5 dbm noise figure 4.0 4.0 4.5 db supply current (idd)(vdd = +5v, vgg = -0.8v typ.) 250 250 250 ma * adjust vgg between -2 to 0v to achieve idd = 250 ma typical.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 283 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -25 -15 -5 5 15 25 12 14 16 18 20 22 24 26 28 s21 s11 s22 response (db) frequency (ghz) 10 14 18 22 26 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c gain (db) frequency (ghz) -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c return loss (db) frequency (ghz) 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c psat (dbm) frequency (ghz) hmc498lc4 gaas phemt medium power amplifier, 17 - 24 ghz v02.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 284 linear & power amplifiers - smt power compression @ 18 ghz output ip3 vs. temperature noise figure vs. temperature gain, power & oip3 vs. supply voltage @ 23 ghz reverse isolation vs. temperature power compression @ 23 ghz 20 24 28 32 36 40 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 20 24 28 32 36 40 4.5 5 5.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm ) vdd supply voltage (vdc) -70 -60 -50 -40 -30 -20 -10 0 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c isolation (db) frequency (ghz) 0 5 10 15 20 25 30 -10-8-6-4-20246810 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 -10-8-6-4-20246810 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 1 2 3 4 5 6 7 8 9 10 16 17 18 19 20 21 22 23 24 25 +25 c +85 c -40 c noise figure (db) frequency (ghz) hmc498lc4 gaas phemt medium power amplifier, 17 - 24 ghz v02.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 285 outline drawing absolute maximum ratings drain bias voltage (vdd1, vdd2, vdd3) +5.5 vdc gate bias voltage (vgg) -4.0 to 0 vdc rf input power (rfin)(vdd = +5vdc) +10 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 18 mw/c above 85 c) 1.62 w thermal resistance (channel to ground paddle) 55.6 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a vdd (vdc) idd (ma) +4.5 239 +5.0 250 +5.5 262 typical supply current vs. vdd note: ampli er will operate over full voltage ranges shown above. vgg adjusted to achieve idd= 250 ma at +5v. notes: 1. package body material: alumina. 2. lead and ground paddle plating: gold flash over nickel. 3. dimensions are in inches (millimeters). 4. lead spacing tolerance is non-cumulative. 5. characters to be helvetica medium, .025 high, black ink, or laser mark located approx. as shown. 6. package warp shall not exceed 0.05mm datum C c C 7. all ground leads and ground paddle must be soldered to pcb rf ground. hmc498lc4 gaas phemt medium power amplifier, 17 - 24 ghz v02.1208 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 286 linear & power amplifiers - smt pin descriptions pin number function description interface schematic 1, 5 - 8, 10 - 14, 18, 20, 22, 24 n/c no connection required. these pins may be connected to rf/dc ground without affecting performance. 2, 4, 15, 17 gnd package bottom has an exposed metal paddle that must also be connected to rf/dc ground. 3rfin this pin is ac coupled and matched to 50 ohms. 9vgg gate control for ampli er. adjust to achieve id of 250 ma. please follow mmic ampli er biasing procedure application note. external bypass capacitors of 100 pf, 1000 pf and 2.2 f are required. 16 rfout this pin is ac coupled and matched to 50 ohms. 23, 21, 19 vdd1, vdd2, vdd3 power supply voltage for the ampli er. external bypass capacitors of 100 pf, 1000pf, and 2.2 f are required. hmc498lc4 gaas phemt medium power amplifier, 17 - 24 ghz v02.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 287 evaluation pcb item description j1, j2 2.92 mm pc mount k-connector j3 - j8 dc pin c1 - c4 100 pf capacitor, 0402 pkg. c5 - c8 1,000 pf capacitor, 0603 pkg. c9 - c12 2.2f capacitor, tantalum u1 hmc498lc4 ampli er pcb [2] 108535 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350. list of materials for evaluation pcb 108537 [1] the circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro- priate heat sink. the evaluation circuit board shown is available from hittite upon request. hmc498lc4 gaas phemt medium power amplifier, 17 - 24 ghz v02.1208
|
